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Measurement of Low Polarization Losses of a Semiconductor Material in Finished Diodes
- Authors: Semyonov E.V.1, Malakhovskiy O.Y.2
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Affiliations:
- Tomsk State University of Control Systems and Radioelectronics
- JSC “Scientific-Research Institute of Semiconductor Devices
- Issue: No 2 (2023)
- Pages: 122-128
- Section: ЛАБОРАТОРНАЯ ТЕХНИКА
- URL: https://rjraap.com/0032-8162/article/view/670569
- DOI: https://doi.org/10.31857/S0032816223010226
- EDN: https://elibrary.ru/PWDAME
- ID: 670569
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Abstract
A method for the measurement of semiconductor polarization losses in the depletion region of a finished diode is considered. It is shown that the measurement can be performed by comparing with a low-loss capacitor using general-purpose impedance meters in laboratories without stabilizing the microclimate and shielding the electromagnetic fields. To exclude the drift error under these conditions, multiple regular switching of the measurement object and low-loss capacitor is proposed. As a result, the polarization loss tangent of 1.9 × 10−4 was measured with an error of ±16%.
About the authors
E. V. Semyonov
Tomsk State University of Control Systems and Radioelectronics
Email: edwardsemyonov@narod.ru
634050, Tomsk, Russia
O. Yu. Malakhovskiy
JSC “Scientific-Research Institute of Semiconductor Devices
Author for correspondence.
Email: edwardsemyonov@narod.ru
634034, Tomsk, Russia
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