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Mikroèlektronika
ISSN 0544-1269 (Print)
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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

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Keywords Förster effect bipolar transistor diagnostics etching gas temperature ionization kinetics magnetron sputtering mechanism memristor modeling molecular beam epitaxy plasma polymerization powerful LDMOS quantum dot reduced electric field strength resistive switching silicon silicon-on-insulator technology specific power
Current Issue

Vol 54, No 4 (2025)

Home > Search > Browse Section Index > NANOTRANSISTORS

NANOTRANSISTORS

Issue Title File
Vol 54, No 2 (2025) Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors PDF
(Rus)
Masalsky N.V.
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