НАДЕЖНОСТЬ
| Issue | Title | File | |
| Vol 52, No 4 (2023) | Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation |
 (Rus) |
|
| Glushko A.A., Morozov S.A., Chistyakov M.G. | |||
| Vol 52, No 4 (2023) | Single Event Displacement Effects in a VLSI |
(Rus) |
|
| Chumakov A.I. | |||
| 1 - 2 of 2 Items | |||