УСТРОЙСТВА
| 期 | 标题 | 文件 | |
| 卷 52, 编号 3 (2023) | Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data |
 (Rus) |
|
| Serov D., Khorin I. | |||
| 1 - 1 的 1 信息 | |||
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关键字
Förster effect
bipolar transistor
diagnostics
etching
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
powerful LDMOS
quantum dot
reduced electric field strength
resistive switching
silicon
silicon-on-insulator technology
specific power
最新一期
卷 54, 编号 4 (2025)
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用户
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关键字
Förster effect
bipolar transistor
diagnostics
etching
gas temperature
ionization
kinetics
magnetron sputtering
mechanism
memristor
modeling
molecular beam epitaxy
plasma
polymerization
powerful LDMOS
quantum dot
reduced electric field strength
resistive switching
silicon
silicon-on-insulator technology
specific power
最新一期