Ultrathin GeTe Crystal in a Strong Femtosecond Laser Field: Manifestation of a Quantum Size Effect

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Resumo

The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses (μm) has been studied using a pulsed electron diffractometer. The sample is an annealed 20-nm GeTe film on a copper grid with a carbon coating. It has been found that laser ablation results in the formation of an ultrathin GeTe crystal (assumingly, GeTe monolayer) with a high radiation resistance. Possible reasons for the detected nanosize effect are discussed.

Sobre autores

S. Aseev

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

Email: isanfemto@yandex.ru

B. Mironov

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

Email: isanfemto@yandex.ru

I. Kochikov

Faculty of Physics, Moscow State University, 119234, Moscow, Russia

Email: isanfemto@yandex.ru

A. Lotin

Institute of Problems of Laser and Information Technologies, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, 140700, Shatura, Moscow region, Russia

Email: isanfemto@yandex.ru

A. Ishchenko

Lomonosov Institute of Fine Chemical Technology, Russian Technological University, 119571, Moscow, Russia

Email: isanfemto@yandex.ru

E. Ryabov

Institute of Spectroscopy, Russian Academy of Sciences, 108840, Troitsk, Moscow, Russia

Autor responsável pela correspondência
Email: ryabov@isan.troitsk.ru

Bibliografia

  1. M. Wuttig, H. Bhaskaran, and T. Taubner, Nature Photon. 11, 465 (2017).
  2. С. А. Козюхин, П. И. Лазаренко, А. И. Попов, И. Л. Еременко, Успехи химии 91, RCR5033 (2022).
  3. B. J. Kooi and M. Wuttig, Adv. Mater. 32, 1908302 (2020).
  4. P. Kerres, Y. Zhou, H. Vaishnav et al. (Collaboration), Small 18, 2201753 (2022).
  5. H. Wu, W. Han, and X. Zhang, Materials 15, 6760 (2022).
  6. L. Waldecker, T. A. Miller, M.Rude, R. Bertoni, J. Osmond, V. Pruneri, R. E. Simpson, R. Ernstorfer, and S. Wall, Nature Mater. 14, 991 (2015).
  7. Y. Qi, N. Chen, Th. Vasileiadis, D. Zahn, H. Seiler, X. Li, and R. Ernstorfer, Phys. Rev. Lett. 129, 135701 (2022).
  8. T. Kunkel, Y. Vorobyov, M. Smayev, P. Lazarenko, Al. Kolobov, and S. Kozyukhin, Appl. Surf. Sci. 624, 157122 (2023).
  9. J. M. Leger and A. M. Redon, J. Phys.: Condens. Matter. 2, 5655 (1990).
  10. A. Onodera, I. Sakamoto, and Y. Fujii, Phys. Rev. B 56, 7935 (1997).
  11. Б. Н. Миронов, В. О. Компанец, С. А. Асеев, А. А. Ищенко, И. В. Кочиков, О. В. Мисочко, С. В. Чекалин, Е. А. Рябов, ЖЭТФ 151, 494 (2017).
  12. S. A. Aseyev, E. A. Ryabov, B. N. Mironov,I. V. Kochikov, and A. A. Ischenko, Chem. Phys. Lett. 797, 139599 (2022).
  13. D. Filippetto, P. Musumeci, R. K. Li, B. J. Siwick, M. R. Otto, M. Centurion, J. P. F. Nunes, Rev. Mod. Phys. 94, 045004 (2022).
  14. А. А. Ищенко, Г. В. Гиричев, Ю. И. Тарасов, Дифракция электронов: структура и динамика свободных молекул и конденсированного состояния вещества, Физматлит, М. (2013).
  15. V. L. Deringer, G. Cs anyi, and D. M. Proserpio, ChemPhysChem 18, 873 (2017).
  16. I. Paradisanos, E. Kymakis, C. Fotakis, G. Kioseoglou, and E. Stratakis, Appl. Phys. Lett. 105, 041108 (2014).
  17. R. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974).
  18. D. Zhang, Z. Zhou, H. Wang, Z. Yang, and Ch. Liu, Nanoscale, Res. Lett. 13, 400 (2018).
  19. I. G. Vallejo, G. Galle, B. Arnaud, Sh. A. Scott, M. G. Lagally, D. Boschetto, P.-E. Coulon, G. Rizza, Fl. Houdellier, D. Le Bolloc'h, and J. Faure, Phys. Rev. B 97, 054302 (2018).
  20. D. B. Durham, C. Ophus, Kh. M. Siddiqui, A. M. Minor, and D. Filippetto, Struct. Dyn. 9, 064302 (2022).
  21. П. Хирш, А. Хови, Р. Николсон, Д. Пэшли, М. Уэлан, Электронная микроскопия тонких кристаллов, пер. с англ., Мир, М. (1968).
  22. A. V. Kiselev, V. A. Mikhalevsky, A. A. Burtsev, V. V. Ionin, N. N. Eliseev, and A. A. Lotin, Optics and Laser Techn. 143, 107305 (2021).
  23. A. A. Burtsev, N. N. Eliseev, V. A. Mikhalevsky, A. V. Kiselev, V. V. Ionin, V. V. Grebenev, D. N. Karimov, and A. A. Lotin, Mater. Sci. in Semiconductor Proc. 150, 106907 (2022).

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