Thin textured CdTe films on silicon and sapphire substrates: thermal vapor deposition and structural characterization

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Thin films of CdTe were grown on Si (111) and Al2O3 (0001) substrates by thermal deposition from the gas phase. The obtained films were studied using atomic force microscopy, scanning electron microscopy, and X-ray diffraction analysis. It was found that on Al2O3 (0001) substrates, thin films of both wurtzite and sphalerite modifications of CdTe can be obtained. On Si substrates, thin films of the sphalerite modification of CdTe can be obtained. It is shown that the elemental composition of thin films is close to stoichiometry, and in the case of thin films grown on Al2O3 (0001), the deviation did not exceed 1 at. %.

Толық мәтін

Рұқсат жабық

Авторлар туралы

I. Koshelev

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Хат алмасуға жауапты Автор.
Email: iliakoscheleff@yandex.ru
Ресей, Moscow

I. Volchkov

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: iliakoscheleff@yandex.ru
Ресей, Moscow

P. Podkur

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: iliakoscheleff@yandex.ru
Ресей, Moscow

D. Khairetdinova

MISIS National University of Science and Technology

Email: iliakoscheleff@yandex.ru
Ресей, Moscow

I. Doludenko

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: iliakoscheleff@yandex.ru
Ресей, Moscow

V. Kanevsky

Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”

Email: iliakoscheleff@yandex.ru
Ресей, Moscow

Әдебиет тізімі

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2. Fig. 1. The location of the substrate relative to the CdTe spraying area in the thermal spraying unit (a) and the dependence of the deviation of the Cd content (at. %) on stoichiometry (b)

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3. Fig. 2. X–ray diffractograms of CdTe thin films grown on Si (a) and Al2O3 (b) substrates. The inset shows an enlarged diffractogram area for a thin film grown on an Al2O3 substrate in the angle range 42°-52°. The curve numbers correspond to the area numbers in Fig. 1a

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4. Fig. 3. AFM images of a thin CdTe film grown on an Al2O3 (0001) substrate: a, b, c – regions 1, 2, 3, respectively. The inset shows an enlarged view of large crystallites, presumably of the hexagonal phase of wurtzite

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5. Fig. 4. AFM images of a thin CdTe film grown on a Si (111) substrate: a, b, c – regions 1, 2, 3, respectively. The inset shows an enlarged view of area 1

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